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GT011N03D5E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT011N03D5E product

GT011N03D5E

MOSFETs - Single

MOSFETN-Channel30VPower

The GT011N03D5E is a 30V, 209A N-Channel Power MOSFET in a DFN5X6-8L package, designed for high-efficiency power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • High-current power switching

Avoid if

  • Applications requiring low-current or high-voltage isolation

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
30V
ID
209A
RDS(on) (10V)
0.95mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

743c172f607241ca036684d6b5d9af3f_2307191059_GOFORD-GT011N03D5E_C7465394.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT011N03D5E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET utilizing advanced trench technology for low RDS(on) and low gate charge.