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GT011N03ME AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT011N03ME product

GT011N03ME

MOSFETs - Single

N-ChannelMOSFET30VHigh Current

The GT011N03ME is a high-current N-Channel MOSFET in a TO-263 package, optimized for low RDS(on) and efficient power switching.

Best for

  • DC/DC converters
  • High-current power switching

Avoid if

  • Applications requiring extremely small form factors (TO-263 is relatively large).

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
30 V
ID
209 A
RDS(on)
1.6 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

8d7ff4373620e38b1491ad221ffdd865_2307191100_GOFORD-GT011N03ME_C7465434.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT011N03ME: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode Power MOSFET from Goford Semiconductor, designed for high-efficiency power switching and DC/DC conversion.