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GT013N04T AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT013N04T product

GT013N04T

MOSFETs - Single

N-ChannelMOSFET40VTO-220

The GT013N04T is a 40V, 220A N-Channel MOSFET in a TO-220 package, designed for high-current power switching and DC/DC conversion applications.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring extremely low power dissipation beyond 90W
  • Space-constrained designs where TO-220 is too large

Check before use

  • Thermal resistance (RthJC = 1.39°C/W)
  • Gate drive voltage levels

Key specifications

VDS
40 V
ID
220 A
RDS(on)
< 2.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SwitchingDC/DC Converters

Datasheet

926667276b548b0a0ecf4314285248c0_2312160131_GOFORD-GT013N04T_C19673792.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT013N04T: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The GT013N04T is an N-Channel enhancement mode power MOSFET from GOFORD, utilizing advanced trench technology to achieve low RDS(on) and low gate charge.