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GT019N04D5 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT019N04D5 product

GT019N04D5

FETs

N-ChannelMOSFET40VPower

The GT019N04D5 is a 40V, 120A N-Channel Power MOSFET in a DFN5x6-8L package, designed for high-efficiency power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements
  • Gate drive capability

Key specifications

VDS
40 V
ID
120 A
RDS(on) @ 10V
2.8 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

9e2b4d62d6b9a9bcc9466d2d7bdf9b11_2307191058_GOFORD-GT019N04D5_C7465313.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT019N04D5: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET utilizing advanced trench technology for low RDS(on) and low gate charge.