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GT025N06AM-B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT025N06AM-B product

GT025N06AM-B

MOSFETs - Single

MOSFETN-Channel60VPower

The GT025N06AM-B is a 60V, 170A N-Channel power MOSFET in a TO-263 package, optimized for high-current switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Low-power, space-constrained applications

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
60 V
ID
170 A
RDS(ON)
< 3.2 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

4586df438e39247eec9f75a990f10765_2403181120_GOFORD-GT025N06AM-B_C22362831.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT025N06AM-B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET using advanced trench technology, rated for 60V and 170A.