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GT025N06AM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT025N06AM product

GT025N06AM

FETs

MOSFETN-Channel60VPower

The GT025N06AM is a high-performance 60V N-Channel power MOSFET in a TO-263 package, optimized for high-current power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Power switching
  • Synchronous rectification

Avoid if

  • Low-power or space-constrained applications where TO-263 is too large.

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
170 A
RDS(on)
2.5 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
REACH Unaffected
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power ManagementIndustrial

Datasheet

65453d24e2951c19a26e2d9300ca6cc8_GOFORD-GT025N06AM.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT025N06AM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET designed for high-efficiency power applications.