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GT060N04D5 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT060N04D5 product

GT060N04D5

MOSFETs - Single

Dual N-ChannelMOSFET40V62A

The GT060N04D52 is a dual N-channel enhancement mode MOSFET using trench technology, designed for efficient power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Power switching applications

Avoid if

  • Applications requiring high-side gate drive isolation without proper level shifting

Check before use

  • Thermal design and PCB layout for heat dissipation

Key specifications

VDS
40 V
ID
62 A
RDS(on)
6.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

d8faa6167c78850c410cc66df7a743cb_2212141409_GOFORD-GT060N04D5_C5258963.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT060N04D5: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode power MOSFET housed in a DFN5x6-8L package, optimized for low gate charge and low on-resistance.