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GT060N04D52 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT060N04D52 product

GT060N04D52

FETs

MOSFETDual N-Channel40V

The GT060N04D52 is a dual N-channel enhancement mode power MOSFET in a DFN5x6-8L package, designed for power switching and DC/DC converter applications.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring high-voltage isolation beyond 40V.

Check before use

  • Thermal dissipation requirements and gate drive voltage levels.

Key specifications

VDS
40V
ID
62A
RDS(on)
6.5mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

4258542257c8fce25d9ea48c995c1800_2307191057_GOFORD-GT060N04D52_C7465295.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT060N04D52: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel power MOSFET utilizing advanced trench technology, optimized for low RDS(on) and low gate charge.