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GT065P06T AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT065P06T product

GT065P06T

MOSFETs - Single

MOSFETP-ChannelPowerTO-220

The GT065P06T is a high-performance P-Channel power MOSFET in a TO-220 package, ideal for high-current power switching and DC/DC conversion.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring N-Channel logic
  • Space-constrained designs where TO-220 is too large

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-60 V
ID
-82 A
RDS(ON)
< 7.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

1f431142ff0fa357f2d3007384176f41_2307191058_GOFORD-GT065P06T_C7465385.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT065P06T: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET using advanced trench technology, rated for -60V and -82A.