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GT080N08D5 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT080N08D5 product

GT080N08D5

FETs

MOSFETN-ChannelPower Switch

The GT080N08D5 is an 85V, 65A N-Channel enhancement mode MOSFET using advanced trench technology, optimized for low RDS(ON) and gate charge in power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements in the target PCB layout

Key specifications

VDS
85 V
ID
65 A
RDS(ON)
< 8.5 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
REACH Unaffected
MSL
-
ECCN
EAR99
HTSUS
8541.29.0000

Application

Power Management

Datasheet

8d66c06c12958212e907faa69fed13a2_2307191058_GOFORD-GT080N08D5_C7465307.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT080N08D5: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET designed for high-efficiency power switching and DC/DC converter applications.