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GT080N10M AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT080N10M product

GT080N10M

FETs

N-ChannelMOSFET100VTO-263

The GT080N10M is a 100V, 70A N-Channel Power MOSFET in a TO-263 package, designed for high-efficiency power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • General power switching applications

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V
  • Space-constrained designs where TO-263 is too large

Check before use

  • Thermal design for high-current operation
  • Gate drive circuit compatibility

Key specifications

VDS
100 V
ID
70 A
RDS(on)
8 mΩ

Compliance & Environment

RoHS
RoHS non-compliant
REACH
Vendor Undefined
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0000

Application

Power SwitchingDC/DC Converters

Datasheet

ff9b9c47fb0def4100805d98315dc1eb_products-detail.php.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT080N10M: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The GT080N10M is an N-Channel Enhancement Mode Power MOSFET from GOFORD, utilizing advanced trench technology to achieve low RDS(on) and low gate charge.