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GT088N06T AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT088N06T product

GT088N06T

MOSFETs - Single

N-ChannelMOSFET60VTO-220

The GT088N06T is a 60V, 60A N-Channel MOSFET designed for high-efficiency power switching applications.

Best for

  • Synchronous rectification
  • Motor control
  • BMS circuits

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V
  • Space-constrained designs requiring SMD packages

Check before use

  • Thermal resistance (RthJC = 2°C/W)
  • Gate drive requirements

Key specifications

VDS
60 V
ID
60 A
RDS(on)
< 9 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

94383c4c3623a2f9a3935079a26c0b56_2212141409_GOFORD-GT088N06T_C5258982.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT088N06T: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The GT088N06T is an N-Channel enhancement mode power MOSFET from Goford Semiconductor, utilizing advanced trench technology for low gate charge and low on-resistance.