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GT090N06D52 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT090N06D52 product

GT090N06D52

MOSFETs - Arrays

MOSFETN-ChannelPowerDual

The GT090N06D52 is a dual N-Channel MOSFET array optimized for high-efficiency power switching applications.

Best for

  • Synchronous rectification
  • Motor control
  • BMS

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal design and PCB layout for heat dissipation

Key specifications

VDS
60 V
ID
40 A
RDS(ON)
< 14 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
Vendor Undefined
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power ManagementMotor Control

Datasheet

72382d13f3a1f094365ee0e3cb3a548b_2206161801_GOFORD-GT090N06D52_C3038568.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT090N06D52: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-Channel enhancement mode power MOSFET using advanced trench technology, rated for 60V and 40A.