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GT10N10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT10N10 product

GT10N10

MOSFETs - Single

MOSFETN-Channel100VTO-252

The GT10N10 is a 100V, 7A N-Channel power MOSFET in a TO-252 package, optimized for efficient power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • General power switching

Avoid if

  • High-current applications exceeding 7A continuous

Check before use

  • Thermal design requirements

Key specifications

VDS
100 V
ID
7 A
RDS(ON)
140 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
-
ECCN
EAR99
HTSUS
-

Application

Power Management

Datasheet

99c899515338097de40b1e00117f2109_2212231008_GOFORD-GT10N10_C581347.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT10N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The GT10N10 is an N-Channel enhancement mode power MOSFET from Goford Semiconductor, designed for high-efficiency switching applications.