GT120N10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT120N10 product

GT120N10

MOSFETs - Single

MOSFETN-ChannelPower100V

The GT120N10 is a 100V N-Channel Super Trench MOSFET designed for high-efficiency power switching.

Best for

  • DC/DC power conversion
  • Synchronous rectification

Avoid if

  • Low-power applications where gate charge losses might dominate

Check before use

  • Thermal dissipation requirements
  • Gate driver current capability

Key specifications

VDS
100 V
ID
120 A
RDS(on)
3.7 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Conversion

CAD Models

Download ECAD models for GT120N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-performance N-Channel power MOSFET using Super Trench technology, rated for 100V and 120A.