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GT130N10D3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT130N10D3 product

GT130N10D3

MOSFETs - Single

MOSFETN-Channel100V

The GT130N10D3 is a 100V, 52A N-Channel enhancement mode power MOSFET using trench technology, housed in a DFN3X3-8L package.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring higher voltage or current ratings

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

VDS
100V
ID
52A
RDS(on)
< 12.5mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

38f3d4d58e46041b214d668dba813457_2312160131_GOFORD-GT130N10D3_C19673821.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT130N10D3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET designed for power switching and DC/DC converter applications.