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GT130N10M AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT130N10M product

GT130N10M

MOSFETs - Single

MOSFETN-Channel100VPower

The GT130N10M is a 100V, 60A N-Channel Power MOSFET in a TO-263 package, designed for power switching and DC/DC converter applications.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring extremely low gate charge or different package footprints.

Check before use

  • Thermal dissipation requirements and gate drive voltage levels.

Key specifications

VDS
100 V
ID
60 A
RDS(on)
12 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

62fc5281e98ba37a790a9e1ce978cd1d_2307191100_GOFORD-GT130N10M_C7465429.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT130N10M: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET utilizing advanced trench technology for low RDS(on) and efficient switching.