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GT180P08D5 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT180P08D5 product

GT180P08D5

MOSFETs - Single

P-ChannelMOSFET80VPower

The GT180P08D5 is a high-performance P-Channel MOSFET in a DFN5x6-8L package, optimized for power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Power switching applications

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs without thermal dissipation paths

Check before use

  • Gate drive voltage levels
  • Thermal design

Key specifications

VDS
-80 V
ID
-89 A
RDS(on)
18 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

aef932313bc63dc6784806a9b0993ccb_2401241508_GOFORD-GT180P08D5_C7465397.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT180P08D5: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET from GOFORD, featuring advanced trench technology for low RDS(on) and low gate charge.