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GT250P10T AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT250P10T product

GT250P10T

MOSFETs - Single

P-ChannelMOSFETTO-220Power Switch

The GT250P10T is a high-performance P-Channel power MOSFET from Goford, optimized for power switching and DC/DC conversion with low on-resistance.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring N-Channel logic
  • Space-constrained designs where TO-220 is too large

Check before use

  • Thermal design
  • Gate drive circuit compatibility

Key specifications

VDS
-100 V
ID
-56 A
RDS(on)
< 30 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

fdc4a87590b1f6c31663b57e8f23468b_2312160131_GOFORD-GT250P10T_C19673855.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT250P10T: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET utilizing advanced trench technology, housed in a TO-220 package.