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GT30J122A(STA1,E,D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT30J122A(STA1,E,D product

GT30J122A(STA1,E,D

Transistors - IGBTs - Single

IGBT600VPower

The GT30J122A is a 600V, 30A N-Channel IGBT optimized for high-speed switching in resonant inverter and PFC circuits.

Best for

  • Resonant inverters
  • PFC stages

Avoid if

  • General purpose low-power switching where lower-cost MOSFETs suffice

Check before use

  • Thermal dissipation capacity
  • Gate drive voltage levels

Key specifications

VCES
600 V
IC (DC)
30 A
VCE(sat)
1.7 V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Conversion

Datasheet

23dede298be4aa87d8916f7a66e3bbc1_1912111437_TOSHIBA-GT30J122A-STA1-E-D_C435817.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT30J122A(STA1,E,D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 4th generation N-Channel IGBT from Toshiba, designed for high-efficiency power conversion.