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GT52N10T AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT52N10T product

GT52N10T

MOSFETs - Single

MOSFETN-Channel100VTO-220

The GT52N10T is a 100V, 70A N-Channel Power MOSFET in a TO-220 package, optimized for high-efficiency power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring surface mount (SMD) packaging

Check before use

  • Thermal design requirements
  • Gate drive voltage levels

Key specifications

VDS
100 V
ID
70 A
RDS(on)
9 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

e4ffbc79601c97884b1439266a242fca_2212231008_GOFORD-GT52N10T_C581350.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT52N10T: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode Power MOSFET from Goford Semiconductor, featuring advanced trench technology for low RDS(on) and gate charge.