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GT55N06D5-B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GT55N06D5-B product

GT55N06D5-B

MOSFETs - Single

N-ChannelMOSFET60VPower

The GT55N06D5-B is a 60V N-Channel MOSFET from GOFORD, designed for high-efficiency power switching and DC/DC conversion applications in a compact DFN5*6-8L package.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring voltage ratings significantly above 60V

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
45 A
RDS(on)
< 11 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

c447591654b68fccb2427cc8bce3017c_2403181120_GOFORD-GT55N06D5-B_C22362799.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GT55N06D5-B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology for low RDS(on) and low gate charge.