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H2SB1260T100R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

H2SB1260T100R product

H2SB1260T100R

Transistors - Bipolar (BJT) - Single

PNPTransistorSOT-89

The H2SB1260T100R is a PNP power transistor designed for high-voltage and high-current applications in an SOT-89 package.

Best for

  • General purpose switching
  • Signal amplification

Avoid if

  • Applications requiring >500mW power dissipation without heat sinking

Check before use

  • Thermal design
  • Pinout configuration

Key specifications

Polarity
PNP
VCEO
-80 V
IC
-1 A

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Electronics

Datasheet

0d6ad2fc244242224281d96a002811f7_2407151447_HXY-MOSFET-H2SB1260T100R_C22462620.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for H2SB1260T100R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP power transistor capable of handling up to -80V and -1A, commonly used in switching and amplification circuits.