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H2SC3357-RE AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

H2SC3357-RE product

H2SC3357-RE

Transistors - Bipolar (BJT) - RF

NPNRF TransistorSOT-89

The H2SC3357-RE is a high-frequency NPN transistor in an SOT-89 package, optimized for RF applications with a 6.5GHz transition frequency.

Best for

  • RF signal amplification
  • High-frequency oscillators

Avoid if

  • High-power switching applications exceeding 100mA

Check before use

  • Thermal dissipation requirements in the PCB layout

Key specifications

VCEO
12 V
fT
6.5 GHz
IC
100 mA
Package
SOT-89

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF Amplifiers

Datasheet

9b06a99407dd131e2a210a0dae195f9d_2406131717_HXY-MOSFET-H2SC3357-RE_C22462622.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for H2SC3357-RE: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN RF transistor designed for high-frequency signal amplification.