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H2SD1898T100R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

H2SD1898T100R product

H2SD1898T100R

Transistors - Bipolar (BJT) - Single

NPNBJTSOT-89High Voltage

The H2SD1898T100R is a high-voltage NPN BJT in an SOT-89 package, suitable for general-purpose switching and amplification tasks.

Best for

  • General purpose switching
  • Low-power amplification

Avoid if

  • Applications exceeding 0.5W power dissipation
  • High-frequency RF circuits

Check before use

  • Thermal dissipation requirements
  • Pinout compatibility with SOT-89 footprint

Key specifications

VCEO
80 V
IC
1 A
hFE
180-390

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General Purpose

Datasheet

f993bf79dbeda9f2b0426b0c92b4dc2d_2406131717_HXY-MOSFET-H2SD1898T100R_C22462616.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for H2SD1898T100R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN bipolar junction transistor designed for high-voltage applications, featuring an 80V collector-emitter breakdown voltage.