H2SK3078A Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

H2SK3078A product

The H2SK3078A is a specialized RF MOSFET designed for high-frequency power amplification in the 400-470MHz range, packaged in a compact SOT-89 format.

Best for

RF power amplification
400-470MHz wireless systems

Avoid if

General purpose switching outside RF bands
High-power applications exceeding 3W

Check before use

RF matching network design
Thermal dissipation requirements

Key specifications

VDSS: 12 V
ID: 0.5 A
Power Gain: 13.5 dB

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

RF Power Amplification

Datasheet

29c3bec8a56f8adac3f9b122836e0b7a_2406111705_HXY-MOSFET-H2SK3078A_C22461936.pdf

800 KB

CAD Models

Download ECAD models for H2SK3078A: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-frequency field-effect transistor (MOSFET) optimized for RF applications, specifically power amplification in the 400MHz to 470MHz band.