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H4S5N10B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

H4S5N10B product

H4S5N10B

TVS - Diodes

ESD ProtectionBi-directionalDFN1006-2L

The H4S5N10B is a robust bi-directional ESD protection diode optimized for high-capacitance applications in portable electronics.

Best for

  • ESD protection in portable devices
  • General signal line protection

Avoid if

  • High-speed data lines requiring low capacitance

Check before use

  • Capacitance impact on signal integrity

Key specifications

Reverse Working Voltage
4.5 V
Junction Capacitance
150 pF
Peak Pulse Current
55 A

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Consumer ElectronicsPortable Instrumentation

Datasheet

b59950fed45457bb770641e70dead8e6_2402021507_hongjiacheng-H4S5N10B_C20617910.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for H4S5N10B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a bi-directional ESD protection diode in a DFN1006-2L package, rated for 4.5V reverse working voltage.