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HC2M0080120K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HC2M0080120K product

HC2M0080120K

MOSFETs - Single

SiCMOSFET1200VPower

The HC2M0080120K is a 1200V, 36A SiC N-Channel MOSFET in a TO-247-4L package, designed for high-efficiency power conversion.

Best for

  • EV chargers
  • Renewable energy inverters
  • High-voltage DC/DC converters

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage levels and thermal design.

Key specifications

VDS
1200 V
ID
36 A
RDS(on)
80 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

f2bb1f5f8aa75ff0c8ebd381c8166fb5_2401051806_HXY-MOSFET-HC2M0080120K_C19723862.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HC2M0080120K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon Carbide (SiC) power MOSFET featuring high blocking voltage and low on-resistance, optimized for high-frequency switching.