HC2M1000170D Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

HC2M1000170D product

The HC2M1000170D is a high-voltage 1700V SiC MOSFET suitable for high-efficiency power conversion.

Best for

High-voltage power conversion
High-efficiency switching applications

Avoid if

Low-voltage applications where standard silicon MOSFETs are more cost-effective

Check before use

Gate drive voltage levels
Thermal dissipation requirements

Key specifications

Vdss: 1700 V
Id: 5 A
Rds(on): 1.0 Ω

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

PowerIndustrial

Datasheet

75c7a57acb4c3d73f8b143114a347ad0_2312221750_HXY-MOSFET-HC2M1000170D_C19723852.pdf

800 KB

CAD Models

Download ECAD models for HC2M1000170D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode Silicon Carbide (SiC) Power MOSFET rated for 1700V and 5A, housed in a TO-247-3L package.