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HC3D02120E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HC3D02120E product

HC3D02120E

Silicon Carbide Schottky Diodes

SiC Diode1200VTO-252-2L

The HC3D02120E is a 1200V, 2A Silicon Carbide Schottky diode in a TO-252-2L package, optimized for high-efficiency, high-frequency power conversion.

Best for

  • High-frequency power conversion
  • Compact power supply designs

Avoid if

  • Applications requiring currents significantly higher than 2A
  • Designs where standard silicon diodes are sufficient and cost is the primary driver

Check before use

  • Thermal dissipation requirements
  • PCB footprint compatibility

Key specifications

Reverse Voltage
1200 V
Forward Current
2 A
Forward Voltage
1.35 V

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyIndustrial

Datasheet

b57690524be0e4b7bdb86be910329036_2405311648_HXY-MOSFET-HC3D02120E_C22449566.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HC3D02120E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon Carbide (SiC) Schottky diode from HXY MOSFET, rated for 1200V reverse voltage and 2A forward current.