HC3D06065A Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

HC3D06065A product

The HC3D06065A is a 650V SiC Schottky diode optimized for high-efficiency power conversion, offering low switching losses and high thermal robustness.

Best for

Power Factor Correction (PFC)
High-performance SMPS
UPS systems

Avoid if

Low-frequency applications where standard silicon diodes are sufficient and cost-effective.

Check before use

Thermal derating requirements at high ambient temperatures.

Key specifications

VRRM: 650 V
IF (Tc=160°C): 6 A
VF (typ): 1.3 V
Qc: 18 nC

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power SuppliesIndustrial Inverters

Datasheet

fe35864c83ab3d818f0d2eccf3db166c_2405311649_HXY-MOSFET-HC3D06065A_C22449554.pdf

800 KB

CAD Models

Download ECAD models for HC3D06065A: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon Carbide (SiC) Schottky diode rated for 650V, designed for high-frequency power applications requiring high efficiency.