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HC3D06065E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HC3D06065E product

HC3D06065E

Diodes - Schottky

SiC DiodeSchottky650V

The P1D06065E is a 650V Silicon Carbide Schottky diode in a TO-252-2L package, optimized for high-efficiency, high-frequency power conversion.

Best for

  • Power Factor Correction (PFC)
  • High-performance SMPS
  • UPS systems

Avoid if

  • Applications requiring extremely low-cost silicon diodes where SiC performance benefits are not utilized.

Check before use

  • Thermal resistance and heat sinking requirements.

Key specifications

VRRM
650 V
IF
6 A
VF
1.3 V
Qc
18 nC

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

9a2b8b4f31fecf349d186a88252e9e5d_2406071745_HXY-MOSFET-HC3D06065E_C22449555.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HC3D06065E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The P1D06065E is a Silicon Carbide (SiC) Schottky diode rated for 650V, designed for high-efficiency power applications like SMPS and power factor correction.