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HC3D10120E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HC3D10120E product

HC3D10120E

Diodes - Rectifiers - Single

SiC Diode1200VTO-252-2LSchottky

The HC3D10120E is a 1200V SiC Schottky diode in a TO-252-2L package, offering high efficiency and low switching losses for power electronics.

Best for

  • UPS
  • Power Inverters
  • SMPS
  • PFC circuits

Avoid if

  • Applications requiring through-hole mounting
  • Low-voltage circuits where SiC benefits are not needed

Check before use

  • Thermal resistance (RthJC = 1.30 °C/W)
  • Junction temperature limits

Key specifications

Vr (Max)
1200 V
If (Max)
10 A
Vf (Typ)
1.4 V

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

b2617361763de93961154ce58e51f019_2405311648_HXY-MOSFET-HC3D10120E_C22449568.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HC3D10120E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon Carbide (SiC) Schottky diode rated for 1200V and 10A, designed for high-frequency power conversion.