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HC3D10120G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HC3D10120G product

HC3D10120G

Diodes - Rectifiers - Single

SiC DiodeSchottky1200VTO-263

The HC3D10120G is a 1200V, 10A Silicon Carbide (SiC) Schottky diode in a TO-263 package, optimized for high-efficiency power conversion.

Best for

  • UPS
  • Power Inverters
  • SMPS
  • Power Factor Correction

Avoid if

  • Low-voltage applications where standard silicon diodes are sufficient.

Check before use

  • Thermal resistance and junction temperature limits.

Key specifications

Vr (Max)
1200 V
If (Max)
10 A
Vf (Typ)
1.4 V
Qc
48 nC

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

377f50c91b80357d1eab29f7112f3924_2406031613_HXY-MOSFET-HC3D10120G_C22449569.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HC3D10120G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-performance Silicon Carbide (SiC) Schottky diode rated for 1200V and 10A, designed for high-frequency power applications.