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HC3D12065G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HC3D12065G product

HC3D12065G

Diodes - Rectifiers - Single

SiC DiodeSchottky650VTO-263

The HC3D12065G is a 650V SiC Schottky diode in a TO-263 package, optimized for high-efficiency, high-frequency power conversion.

Best for

  • Power Factor Correction (PFC)
  • Switch-Mode Power Supplies (SMPS)
  • UPS systems

Avoid if

  • Low-frequency applications where SiC benefits are not required.

Check before use

  • Thermal resistance (RthJC = 1.62 °C/W) and heatsinking requirements.

Key specifications

Reverse Voltage
650 V
Forward Current
12 A
Max Forward Voltage
1.55 V
Operating Temp
-55 to +175 °C

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial Inverters

Datasheet

bb36812a3881d4cfb5d9b1fa7fc178d8_2405311649_HXY-MOSFET-HC3D12065G_C22449559.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HC3D12065G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon Carbide (SiC) Schottky diode rated for 650V and 12A, designed for high-efficiency power electronics.