HC3D30065H Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

HC3D30065H product

The HC3D30065H is a 650V, 30A Silicon Carbide (SiC) Schottky diode in a TO-247-2L package, optimized for high-efficiency power conversion applications.

Best for

UPS systems
Power inverters
High-performance SMPS
Power factor correction

Avoid if

Low-frequency applications where SiC benefits are not required
Space-constrained designs requiring smaller packages than TO-247

Check before use

Thermal dissipation requirements
Surge current ratings for specific fault conditions

Key specifications

VRRM: 650 V
IF: 30 A
VF: 1.3 V
QC: 105 nC

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ConversionIndustrial Power

Datasheet

9aaea1ba4af5650a69e45096c7c67414_2406031559_HXY-MOSFET-HC3D30065H_C22449563.pdf

800 KB

CAD Models

Download ECAD models for HC3D30065H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-performance Silicon Carbide Schottky diode rated for 650V and 30A, designed for high-frequency, high-efficiency power electronics.