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HC3M0032120K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HC3M0032120K product

HC3M0032120K

MOSFETs - Single

SiCMOSFET1200VTO-247-4L

The HC3M0032120K is a 1200V, 63A SiC N-Channel MOSFET in a TO-247-4L package, optimized for high-efficiency power conversion.

Best for

  • High-voltage power conversion
  • EV charging infrastructure

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective

Check before use

  • Gate drive voltage levels and thermal dissipation requirements

Key specifications

Vds
1200 V
Id
63 A
Rds(on)
32 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

bd3b43ba329f2d46f2dfa45f8db18614_2312221750_HXY-MOSFET-HC3M0032120K_C19723856.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HC3M0032120K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 3rd generation Silicon Carbide (SiC) N-Channel enhancement mode MOSFET rated for 1200V and 63A.