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HC3M0045065D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HC3M0045065D product

HC3M0045065D

MOSFETs - Single

SiC MOSFET650VTO-247

The HC3M0045065D is a 650V, 49A SiC N-Channel MOSFET in a TO-247 package, optimized for high-efficiency power conversion.

Best for

  • EV battery chargers
  • Renewable energy inverters
  • High-voltage DC/DC converters

Avoid if

  • Low-voltage, low-power applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage levels and thermal dissipation requirements.

Key specifications

Vds
650 V
Id
49 A
Rds(on)
33 mΩ

Compliance & Environment

RoHS
RoHS compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

cf91d5124acf481f81a118efc3268522_2406031559_HXY-MOSFET-HC3M0045065D_C22449546.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HC3M0045065D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 3rd generation Silicon Carbide (SiC) power MOSFET designed for high-voltage, high-efficiency applications like EV chargers and power supplies.