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HC3M0060065D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HC3M0060065D product

HC3M0060065D

MOSFETs - Single

SiC MOSFET650VPower MOSFET

The HC3M0060065D is a 650V N-Channel SiC MOSFET optimized for high-efficiency power switching in industrial and automotive applications.

Best for

  • High-frequency power conversion
  • Totem-pole PFC topologies

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective

Check before use

  • Gate drive voltage levels
  • Thermal resistance calculations

Key specifications

Vdss
650 V
Id
29 A
Rds(on)
60 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

f73465c59227da3578a02a78956ed6bc_2312221750_HXY-MOSFET-HC3M0060065D_C19723857.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HC3M0060065D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 3rd generation Silicon Carbide (SiC) N-Channel enhancement mode MOSFET designed for high-voltage, high-efficiency power conversion.