HC4D10120A Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

HC4D10120A product

The HC4D10120A is a 1200V SiC Schottky diode optimized for high-efficiency, high-frequency power conversion.

Best for

SMPS
PFC stages
Inverter free-wheeling

Avoid if

Applications requiring extremely high surge current robustness beyond the rated limits

Check before use

Thermal resistance and mounting torque

Key specifications

Vr (Max): 1200 V
If (Continuous): 10 A (at 156°C)
Vf (Max): 1.8 V

Compliance & Environment

RoHS: RoHS Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power SuppliesIndustrial Inverters

Datasheet

7112ee5f805163ce41bfc42765631518_2312221750_HXY-MOSFET-HC4D10120A_C19723884.pdf

800 KB

CAD Models

Download ECAD models for HC4D10120A: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) Schottky barrier diode in a TO-220C-2L package, designed for high-efficiency power electronics.