HC4D20120D Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

HC4D20120D product

The HC4D20120D is a 1200V, 20A SiC Schottky diode in a TO-247 package, ideal for high-efficiency power conversion.

Best for

PFC stages
SMPS
Inverter free-wheeling

Avoid if

Low-voltage applications where standard silicon diodes are sufficient

Check before use

Thermal dissipation requirements

Key specifications

Reverse Voltage: 1200 V
Forward Current: 20 A
Max Junction Temp: 175 °C

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power SuppliesInverters

Datasheet

ae5516c60e97bc995b75fa2ebb1c55be_2312221750_HXY-MOSFET-HC4D20120D_C19723888.pdf

800 KB

CAD Models

Download ECAD models for HC4D20120D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon Carbide (SiC) Schottky diode rated for 1200V and 20A, designed for high-frequency power electronics.