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HC4D30120D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HC4D30120D product

HC4D30120D

Diodes - Silicon Carbide Schottky

SiCSchottky1200VTO-247

The HC4D30120D is a 1200V, 30A Silicon Carbide (SiC) Schottky diode in a TO-247 package, optimized for high-efficiency power conversion.

Best for

  • Switch Mode Power Supplies
  • PFC stages
  • Inverter free-wheeling diodes

Avoid if

  • Applications requiring low-voltage operation where standard silicon diodes are more cost-effective.

Check before use

  • Thermal resistance and heat sink requirements.

Key specifications

Reverse Voltage
1200 V
Forward Current
30 A
Forward Voltage
1.6 V

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

860a43fa7c47fdc803a708c9bfcbdd75_2312221750_HXY-MOSFET-HC4D30120D_C19723890.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HC4D30120D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide Schottky diode configured as a common cathode pair, designed for high-frequency switching applications.