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HCD65R360 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HCD65R360 product

HCD65R360

MOSFETs - Single

MOSFETSuper Junction650VTO-252

The HCD65R360 is a 650V N-Channel Super Junction MOSFET designed for high-frequency power conversion applications.

Best for

  • High-frequency switching mode power supplies
  • Active Power Factor Correction (PFC)

Avoid if

  • Applications requiring extremely low RDS(on) beyond 340mΩ
  • Environments exceeding 150°C junction temperature

Check before use

  • Gate drive voltage levels
  • Thermal resistance and heatsink requirements

Key specifications

Vdss
650 V
Id
11 A
Rds(on)
340 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyActive PFC

Datasheet

64991087f414c5f92aa1dfaafc5709ec_2312251801_HUAKE-HCD65R360_C19725800.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HCD65R360: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V N-Channel Super Junction Power MOSFET featuring low gate charge and fast switching characteristics, suitable for high-frequency power supplies.