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HCD65R600 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HCD65R600 product

HCD65R600

MOSFETs - Single

MOSFETSuper Junction650V

The HCD65R600 is a 650V N-Channel Super Junction MOSFET optimized for high-frequency power conversion.

Best for

  • Switching Mode Power Supplies
  • Active Power Factor Correction

Avoid if

  • Applications requiring currents significantly higher than 7A

Check before use

  • Gate drive voltage levels and thermal dissipation requirements

Key specifications

Vdss
650 V
Id
7.0 A
RDS(on)
520 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Supply

Datasheet

14a67babbf1a88df9965ffa98f5afe6a_2312251801_HUAKE-HCD65R600_C19725798.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HCD65R600: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V N-Channel Super Junction Power MOSFET designed for high-efficiency power applications.