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HCF65R360 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HCF65R360 product

HCF65R360

MOSFETs - Single

MOSFETSuper Junction650VPower

The HCF65R360 is a 650V N-Channel Super Junction MOSFET in a TO-220F package, optimized for high-efficiency power conversion applications.

Best for

  • Switching Mode Power Supplies
  • Active Power Factor Correction

Avoid if

  • Applications requiring extremely low thermal resistance (TO-220F is isolated but has higher thermal resistance than TO-220).

Check before use

  • Gate drive voltage levels and thermal dissipation requirements.

Key specifications

VDSS
650 V
ID
11 A
RDS(on)
330 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyPFC

Datasheet

6939924fa6d95d4ba2aadce1071a03e3_2312251801_HUAKE-HCF65R360_C19725794.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HCF65R360: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V N-Channel Super Junction Power MOSFET featuring low gate charge and fast switching characteristics, suitable for high-frequency power supplies.