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HCG65140DAA AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HCG65140DAA product

HCG65140DAA

MOSFETs - Single

GaNPower Transistor650V

The HCG65140DAA is a 650V GaN-on-Silicon enhancement-mode power transistor in an 8mm x 8mm DFN package, optimized for high-frequency power conversion.

Best for

  • AC-DC converters
  • DC-DC converters
  • Totem pole PFC

Avoid if

  • Applications requiring traditional silicon MOSFET gate drive levels without adjustment.

Check before use

  • Gate drive voltage levels and layout for high-frequency switching.

Key specifications

Vds
650 V
Id
17 A
Rds(on)
140 mOhm

Compliance & Environment

RoHS
RoHS Compliant
REACH
REACH Compliant
MSL
MSL3
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

3ae518480474a2ba2930272324547992_2405141047_HXY-MOSFET-HCG65140DAA_C22396444.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HCG65140DAA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V GaN-on-Silicon enhancement-mode power transistor designed for high-efficiency power conversion.