HCG65140DBA Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

HCG65140DBA product

The HCG65140DBA is a 650V GaN-on-Silicon enhancement-mode power transistor in a 5x6mm DFN package, optimized for high-frequency, high-efficiency power conversion.

Best for

High-frequency power conversion
Compact power supplies

Avoid if

Applications requiring traditional silicon MOSFET gate drive compatibility without adjustment

Check before use

Gate drive voltage levels and layout parasitics

Key specifications

Vds: 650 V
Id: 17 A
Rds(on): 100 mΩ

Compliance & Environment

RoHS: RoHS Compliant
REACH: REACH Compliant
MSL: MSL3
ECCN: -
HTSUS: -

Application

Power ConversionIndustrial

Datasheet

aa305f017a7dc342ead7dc47264e0b26_2405141047_HXY-MOSFET-HCG65140DBA_C22396445.pdf

800 KB

CAD Models

Download ECAD models for HCG65140DBA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V enhancement-mode GaN-on-Silicon power transistor designed for high-efficiency power switching applications.