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HGB016NE6A AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HGB016NE6A product

HGB016NE6A

Component

65 VN-channel MOSFET1.6 mOhm maxTO-263-7Power switching

HGB016NE6A is a 65 V N-channel MOSFET for high-current power switching with 1.6 mOhm maximum RDS(on) at 10 V gate drive.

Best for

  • Low-voltage synchronous rectification
  • Hard-switching power stages
  • Telecom and industrial DC/DC converters

Avoid if

  • A gate drive below the specified 10 V RDS(on) test condition is required
  • Thermal capability cannot be validated for high current

Check before use

  • TO-263-7 pin assignment and PCB footprint
  • Case-temperature derating
  • Avalanche and switching-stress margins

Key specifications

Drain-to-source voltage
65 V
On-resistance
1.35 mOhm typ, 1.6 mOhm max at VGS=10 V, ID=20 A
Continuous drain current
180 A package limited at TC=25 C
Package
TO-263-7, 7 leads

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Synchronous rectification in SMPSTelecom and industrial DC/DC converters

Datasheet

94167d4ceea311481d8cbb27cbdd02b3_HGB016NE6A.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HGB016NE6A: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

HGB016NE6A is a Hunteck 65 V N-channel power MOSFET supplied in a TO-263-7 package. Its specified on-resistance is 1.35 mOhm typical and 1.6 mOhm maximum at VGS=10 V and ID=20 A.