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HN4A51JTE85LF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HN4A51JTE85LF product

HN4A51JTE85LF

Bipolar (BJT)

PNPTransistor ArrayAudio

The HN4A51J is a dual PNP transistor array optimized for low-noise audio amplification.

Best for

  • Audio pre-amplifiers
  • Low-noise signal amplification

Avoid if

  • High-power switching applications exceeding 300mW total dissipation

Check before use

  • Thermal management for the SMV package

Key specifications

VCEO
-120 V
IC
-100 mA
hFE
200-700
NF
1 dB

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

Audio

Datasheet

b101226847b7416233c17437f939f941_2401291342_TOSHIBA-HN4A51JTE85LF_C3199457.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HN4A51JTE85LF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon PNP epitaxial dual transistor array designed for audio frequency general-purpose amplifier applications.