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HN6373 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HN6373 product

HN6373

MOSFETs - Single

P-ChannelMOSFET30VTrench

The HN6373 is a -30V, -32A P-Channel MOSFET in a DFN3X3-8L package, optimized for high-current DC/DC and bridge converter applications.

Best for

  • DC/DC converters
  • Full bridge converters

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs without thermal dissipation

Check before use

  • Gate drive voltage levels
  • Thermal design

Key specifications

VDS
-30 V
ID
-32 A
RDS(ON)
12 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

a6e0b7eee1aa2d71ab75d8b2f9027e57_2304271705_HXY-MOSFET-HN6373_C5451638.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HN6373: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HN6373 is a P-Channel enhancement mode MOSFET utilizing trench technology, designed for high-current switching applications.